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| Ordering number:EN5432 FC156 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features * Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC156 is formed with two chips, being equivalent to the 2SC5226, placed in one package. * Excellent in thermal equilibrium and in inter-chip characteristics matching. Electrical Connection 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 Package Dimensions unit:mm 2104A [FC156] 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings 20 10 2 70 200 300 150 -55 to +150 Unit V V V mA mW mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA 90 0.7 0.95 1.0 5 7 0.75 0.5 9 12 8 1.0 1.8 1.2 mV GHz pF pF dB dB dB Conditons Ratings min typ max 1.0 10 200 Unit A A hFE(small/ large) VBE(large- VCE=5V, IC=20mA small) fT Cob Cre VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz | S2le | 2 | S2le | 2 NF Note:The specifications shown above are for each individual transistor. Marking:156 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71196YK (KOTO) TA-0737 No.5432-1/5 FC156 No.5432-2/5 FC156 No.5432-3/5 FC156 No.5432-4/5 FC156 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5432-5/5 |
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